Laser Diode Specifications - Sony SLD1134VL


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655nm / 5mW / 5.6mm package

Absolute Maximum Ratings (Tc=25șC)

Characteristic Symbol Value Unit sld_cc.gif (1890 bytes)
SLD1134VL  5.6mm Package
Internal Circuit & Pin Connections
Optical output power Po 5 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 20 V
Operating temperature Topr -10 to +70 șC
Storage temperature Tstg -40 to +85 șC

Optical and Electrical Characteristics (Tc=25șC)

Characteristic Symbol Min. Typ. Max. Unit Test Condition
Threshold current Ith - 65 80 mA -
Operating current Iop - 75 90 mA Po=4mW
Laser diode operating voltage Vop - 2.3 2.8 V Po=4mW
Lasing wavelength lp 640 655 660 nm Po=4mW
Beam divergence (FWHM) q // 7 8.5 12 deg Po=4mW
Beam divergence (FWHM) q ^ 25 35 40 deg Po=4mW
Differential efficiency h 0.15 0.4 0.7 mW/mA Po=4mW
Monitor current Im 0.05 0.10 0.25 mA Po=4mW, VR(PD)=5V
Astigmatism As - 10 - microns -

Disclaimer: The laser diode information summarized above is based on the respective diode manufacturer's commercial catalog and/or data sheet specifications. The data is presumed to be accurate; however, it is subject to change without notice. Optima makes no representation as to the accuracy of the information and does not assume any responsibility for errors or omissions contained herein.  The user must refer to the manufacturers specifications for details concerning the intended application and operation, diode limitations, and safety.


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Last modified: February 06, 2006